PART |
Description |
Maker |
MX29LV161BTI-70 MX29LV161BTI-70R MX29LV161BTI-90 M |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
MX26LV160 MX26LV160TXEC-70G MX26LV160BMC-55 MX26LV |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
MX29LV160ABXBI-70 MX29LV160BXBI-70 MX29LV160TXBI-7 |
1M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MACRONIX INTERNATIONAL CO LTD Macronix International Co., Ltd. http://
|
LY62L102616ALL-55SL |
16M Bits ( 2Mx8 / 1Mx16 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 12 ns, PDSO48 TVS BIDIRECT 600W 48V SMB 16米(2米x 8/1M × 16)位双操 8 PORT MODULAR SWITCH 4 PORT 100MB MULTI-MODE FIBER BANDWIDTH MANAGER MODULE TP 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
BS616LV1611 BS616LV1611FIP70 BS616LV1611FC BS616LV |
Asynchronous 16M(1Mx16) bits Static RAM From old datasheet system Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
MX29LV161TTC-70 MX29LV161TTC-90R MX29LV161TTC-70R |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000 1A 20V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd. http://
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
AS4LC2M8S1 AS4LC2M8S1-10TC AS4LC2M8S1-12TC AS4LC2M |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM 3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
|
A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL16x2T(ü)16兆位Mx8 Bit/1Mx16位)的CMOS 3.3伏只,同时闪电行
|
AMIC Technology Corporation AMIC Technology, Corp.
|
HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04 Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04 16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|